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IPD105N03LGATMA1

IPD105N03LGATMA1

For Reference Only

Part Number IPD105N03LGATMA1
PNEDA Part # IPD105N03LGATMA1
Description MOSFET N-CH 30V 35A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,876
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD105N03LGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD105N03LGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD105N03LGATMA1, IPD105N03LGATMA1 Datasheet (Total Pages: 12, Size: 1,230.35 KB)
PDFIPD105N03LGATMA1 Datasheet Cover
IPD105N03LGATMA1 Datasheet Page 2 IPD105N03LGATMA1 Datasheet Page 3 IPD105N03LGATMA1 Datasheet Page 4 IPD105N03LGATMA1 Datasheet Page 5 IPD105N03LGATMA1 Datasheet Page 6 IPD105N03LGATMA1 Datasheet Page 7 IPD105N03LGATMA1 Datasheet Page 8 IPD105N03LGATMA1 Datasheet Page 9 IPD105N03LGATMA1 Datasheet Page 10 IPD105N03LGATMA1 Datasheet Page 11

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IPD105N03LGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1500pF @ 15V
FET Feature-
Power Dissipation (Max)38W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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