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IPD105N04LGBTMA1

IPD105N04LGBTMA1

For Reference Only

Part Number IPD105N04LGBTMA1
PNEDA Part # IPD105N04LGBTMA1
Description MOSFET N-CH 40V 40A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,388
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 11 - May 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD105N04LGBTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD105N04LGBTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD105N04LGBTMA1, IPD105N04LGBTMA1 Datasheet (Total Pages: 9, Size: 430.2 KB)
PDFIPD105N04LGBTMA1 Datasheet Cover
IPD105N04LGBTMA1 Datasheet Page 2 IPD105N04LGBTMA1 Datasheet Page 3 IPD105N04LGBTMA1 Datasheet Page 4 IPD105N04LGBTMA1 Datasheet Page 5 IPD105N04LGBTMA1 Datasheet Page 6 IPD105N04LGBTMA1 Datasheet Page 7 IPD105N04LGBTMA1 Datasheet Page 8 IPD105N04LGBTMA1 Datasheet Page 9

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IPD105N04LGBTMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1900pF @ 20V
FET Feature-
Power Dissipation (Max)42W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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