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IPD10N03LA G

IPD10N03LA G

For Reference Only

Part Number IPD10N03LA G
PNEDA Part # IPD10N03LA-G
Description MOSFET N-CH 25V 30A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,884
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD10N03LA G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD10N03LA G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD10N03LA G, IPD10N03LA G Datasheet (Total Pages: 12, Size: 539.19 KB)
PDFIPU10N03LA G Datasheet Cover
IPU10N03LA G Datasheet Page 2 IPU10N03LA G Datasheet Page 3 IPU10N03LA G Datasheet Page 4 IPU10N03LA G Datasheet Page 5 IPU10N03LA G Datasheet Page 6 IPU10N03LA G Datasheet Page 7 IPU10N03LA G Datasheet Page 8 IPU10N03LA G Datasheet Page 9 IPU10N03LA G Datasheet Page 10 IPU10N03LA G Datasheet Page 11

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IPD10N03LA G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1358pF @ 15V
FET Feature-
Power Dissipation (Max)52W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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