Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPD220N06L3GBTMA1

IPD220N06L3GBTMA1

For Reference Only

Part Number IPD220N06L3GBTMA1
PNEDA Part # IPD220N06L3GBTMA1
Description MOSFET N-CH 60V 30A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 61,620
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD220N06L3GBTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD220N06L3GBTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPD220N06L3GBTMA1 Datasheet
  • where to find IPD220N06L3GBTMA1
  • Infineon Technologies

  • Infineon Technologies IPD220N06L3GBTMA1
  • IPD220N06L3GBTMA1 PDF Datasheet
  • IPD220N06L3GBTMA1 Stock

  • IPD220N06L3GBTMA1 Pinout
  • Datasheet IPD220N06L3GBTMA1
  • IPD220N06L3GBTMA1 Supplier

  • Infineon Technologies Distributor
  • IPD220N06L3GBTMA1 Price
  • IPD220N06L3GBTMA1 Distributor

IPD220N06L3GBTMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs22mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 30V
FET Feature-
Power Dissipation (Max)36W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

ZVN4306ASTZ

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

1.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

330mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

850mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

E-Line (TO-92 compatible)

Package / Case

E-Line-3

ISP25DP06LMSATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

1.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

250mOhm @ 1.9A, 10V

Vgs(th) (Max) @ Id

2V @ 270µA

Gate Charge (Qg) (Max) @ Vgs

13.9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

420pF @ 30V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223

Package / Case

TO-261-3

AON7788

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

SRFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

20A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

4100pF @ 15V

FET Feature

Schottky Diode (Body)

Power Dissipation (Max)

3.1W (Ta), 36W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN (3x3)

Package / Case

8-PowerVDFN

STF45N65M5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

78mOhm @ 19.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

91nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

3375pF @ 100V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

ZDX080N50

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

850mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1120pF @ 25V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FM

Package / Case

TO-220-3 Full Pack

Recently Sold

DS5000T-32-16+

DS5000T-32-16+

Maxim Integrated

IC MCU 8BIT 32KB NVSRAM 40EDIP

CMS15(TE12L,Q,M)

CMS15(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 3A M-FLAT

BNX026H01L

BNX026H01L

Murata

FILTER LC 10UF SMD

NAND128W3A2BN6E

NAND128W3A2BN6E

Micron Technology Inc.

IC FLASH 128M PARALLEL 48TSOP

S25FL208K0RMFI041

S25FL208K0RMFI041

Cypress Semiconductor

IC FLASH 8M SPI 76MHZ 8SOIC

2SC4793(F,M)

2SC4793(F,M)

Toshiba Semiconductor and Storage

TRANS NPN 230V 1A TO220NIS

NTCS0603E3103FMT

NTCS0603E3103FMT

Vishay BC Components

THERMISTOR NTC 10KOHM 3610K 0603

CAT24M01WI-GT3

CAT24M01WI-GT3

ON Semiconductor

IC EEPROM 1M I2C 1MHZ 8SOIC

AD9765ASTZ

AD9765ASTZ

Analog Devices

IC DAC 12BIT A-OUT 48LQFP

S6010RTP

S6010RTP

Littelfuse

SCR SENS 600V 10A TO220

ACF321825-103-TD01

ACF321825-103-TD01

TDK

FILTER LC(T) SMD

AD8603AUJZ-REEL7

AD8603AUJZ-REEL7

Analog Devices

IC OPAMP GP 1 CIRCUIT TSOT5