IPD25N06S4L30ATMA1
For Reference Only
| Part Number | IPD25N06S4L30ATMA1 |
| PNEDA Part # | IPD25N06S4L30ATMA1 |
| Description | MOSFET N-CH 60V 25A TO252-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,066 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 1 - May 6 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPD25N06S4L30ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPD25N06S4L30ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPD25N06S4L30ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 8µA |
| Gate Charge (Qg) (Max) @ Vgs | 16.3nC @ 10V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 1220pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 29W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-11 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 170mOhm @ 9.8A, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 140W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 790mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 364pF @ 50V FET Feature - Power Dissipation (Max) 45W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
