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IPD30N03S4L09ATMA1

IPD30N03S4L09ATMA1

For Reference Only

Part Number IPD30N03S4L09ATMA1
PNEDA Part # IPD30N03S4L09ATMA1
Description MOSFET N-CH 30V 30A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 758,724
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD30N03S4L09ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD30N03S4L09ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPD30N03S4L09ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 13µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds1520pF @ 15V
FET Feature-
Power Dissipation (Max)42W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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