IPD30N12S3L31ATMA1
For Reference Only
| Part Number | IPD30N12S3L31ATMA1 |
| PNEDA Part # | IPD30N12S3L31ATMA1 |
| Description | MOSFET N-CHANNEL_100+ |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,484 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 20 - Jun 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPD30N12S3L31ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPD30N12S3L31ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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IPD30N12S3L31ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | * |
| FET Type | - |
| Technology | - |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | - |
| Mounting Type | - |
| Supplier Device Package | - |
| Package / Case | - |
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Manufacturer STMicroelectronics Series SuperMESH™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 520mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1390pF @ 25V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
Manufacturer Infineon Technologies Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
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