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IPD50R1K4CEBTMA1

IPD50R1K4CEBTMA1

For Reference Only

Part Number IPD50R1K4CEBTMA1
PNEDA Part # IPD50R1K4CEBTMA1
Description MOSFET N-CH 500V 3.1A PG-TO-252
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,128
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 10 - May 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD50R1K4CEBTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD50R1K4CEBTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD50R1K4CEBTMA1, IPD50R1K4CEBTMA1 Datasheet (Total Pages: 14, Size: 1,624.95 KB)
PDFIPD50R1K4CEBTMA1 Datasheet Cover
IPD50R1K4CEBTMA1 Datasheet Page 2 IPD50R1K4CEBTMA1 Datasheet Page 3 IPD50R1K4CEBTMA1 Datasheet Page 4 IPD50R1K4CEBTMA1 Datasheet Page 5 IPD50R1K4CEBTMA1 Datasheet Page 6 IPD50R1K4CEBTMA1 Datasheet Page 7 IPD50R1K4CEBTMA1 Datasheet Page 8 IPD50R1K4CEBTMA1 Datasheet Page 9 IPD50R1K4CEBTMA1 Datasheet Page 10 IPD50R1K4CEBTMA1 Datasheet Page 11

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IPD50R1K4CEBTMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ CE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)13V
Rds On (Max) @ Id, Vgs1.4Ohm @ 900mA, 13V
Vgs(th) (Max) @ Id3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs1nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds178pF @ 100V
FET Feature-
Power Dissipation (Max)25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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