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IPD50R399CP

IPD50R399CP

For Reference Only

Part Number IPD50R399CP
PNEDA Part # IPD50R399CP
Description MOSFET N-CH 550V 9A TO-252
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,598
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD50R399CP Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD50R399CP
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD50R399CP, IPD50R399CP Datasheet (Total Pages: 10, Size: 305.81 KB)
PDFIPD50R399CPBTMA1 Datasheet Cover
IPD50R399CPBTMA1 Datasheet Page 2 IPD50R399CPBTMA1 Datasheet Page 3 IPD50R399CPBTMA1 Datasheet Page 4 IPD50R399CPBTMA1 Datasheet Page 5 IPD50R399CPBTMA1 Datasheet Page 6 IPD50R399CPBTMA1 Datasheet Page 7 IPD50R399CPBTMA1 Datasheet Page 8 IPD50R399CPBTMA1 Datasheet Page 9 IPD50R399CPBTMA1 Datasheet Page 10

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IPD50R399CP Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)550V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs399mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id3.5V @ 330µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds890pF @ 100V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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