Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPD50R500CEAUMA1

IPD50R500CEAUMA1

For Reference Only

Part Number IPD50R500CEAUMA1
PNEDA Part # IPD50R500CEAUMA1
Description MOSFET N-CH 550V 7.6A TO252
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 57,186
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD50R500CEAUMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD50R500CEAUMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPD50R500CEAUMA1 Datasheet
  • where to find IPD50R500CEAUMA1
  • Infineon Technologies

  • Infineon Technologies IPD50R500CEAUMA1
  • IPD50R500CEAUMA1 PDF Datasheet
  • IPD50R500CEAUMA1 Stock

  • IPD50R500CEAUMA1 Pinout
  • Datasheet IPD50R500CEAUMA1
  • IPD50R500CEAUMA1 Supplier

  • Infineon Technologies Distributor
  • IPD50R500CEAUMA1 Price
  • IPD50R500CEAUMA1 Distributor

IPD50R500CEAUMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)550V
Current - Continuous Drain (Id) @ 25°C7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)13V
Rds On (Max) @ Id, Vgs500mOhm @ 2.3A, 13V
Vgs(th) (Max) @ Id3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs18.7nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds433pF @ 100V
FET Feature-
Power Dissipation (Max)57W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

FDP20N50F

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

260mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3390pF @ 25V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

IRFR1205TRR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

44A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

27mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

107W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FQA13N50

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

13.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

430mOhm @ 6.7A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2300pF @ 25V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

IRFR9110TR

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

200pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

TSM085P03CV RGG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

64A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.5mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3234pF @ 15V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PDFN (3x3)

Package / Case

8-PowerWDFN

Recently Sold

HDSP-0770

HDSP-0770

Broadcom

DISPLAY 4X7 NUM RDP BCD HER

NB2305AI1HDR2G

NB2305AI1HDR2G

ON Semiconductor

IC BUFFER CLOCK 5OUT 3.3V 8-SOIC

NFE31PT222Z1E9L

NFE31PT222Z1E9L

Murata

FILTER LC(T) 2200PF SMD

S25FL032P0XMFI001

S25FL032P0XMFI001

Cypress Semiconductor

IC FLASH 32M SPI 104MHZ 16SOIC

TC4426EUA

TC4426EUA

Microchip Technology

IC MOSFET DVR 1.5A DUAL HS 8MSOP

1N4007-TP

1N4007-TP

Micro Commercial Co

DIODE GEN PURP 1KV 1A DO41

EX-11EB

EX-11EB

Panasonic Industrial Automation Sales

SENSOR THROUGH-BEAM 15CM NPN

MTFC8GAKAJCN-4M IT

MTFC8GAKAJCN-4M IT

Micron Technology Inc.

IC FLASH 64G MMC

VS-30BQ060TRPBF

VS-30BQ060TRPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3A SMC

MT25QL128ABA1ESE-0SIT

MT25QL128ABA1ESE-0SIT

Micron Technology Inc.

IC FLASH 128M SPI 133MHZ 8SOP2

EL5211IYEZ-T13

EL5211IYEZ-T13

Renesas Electronics America Inc.

IC OPAMP VFB 2 CIRCUIT 8HMSOP

APXH200ARA470MH70G

APXH200ARA470MH70G

United Chemi-Con

CAP ALUM POLY 47UF 20% 20V SMD