IPD5N25S3430ATMA1
For Reference Only
| Part Number | IPD5N25S3430ATMA1 |
| PNEDA Part # | IPD5N25S3430ATMA1 |
| Description | MOSFET N-CH TO252-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,858 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 18 - May 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPD5N25S3430ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPD5N25S3430ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPD5N25S3430ATMA1 Datasheet
- where to find IPD5N25S3430ATMA1
- Infineon Technologies
- Infineon Technologies IPD5N25S3430ATMA1
- IPD5N25S3430ATMA1 PDF Datasheet
- IPD5N25S3430ATMA1 Stock
- IPD5N25S3430ATMA1 Pinout
- Datasheet IPD5N25S3430ATMA1
- IPD5N25S3430ATMA1 Supplier
- Infineon Technologies Distributor
- IPD5N25S3430ATMA1 Price
- IPD5N25S3430ATMA1 Distributor
IPD5N25S3430ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 13µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 422pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 41W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-313 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
The Products You May Be Interested In
|
Manufacturer STMicroelectronics Series STripFET™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 160A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 2.5mOhm @ 80A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 15V FET Feature - Power Dissipation (Max) 210W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 10-PowerSO Package / Case PowerSO-10 Exposed Bottom Pad |
Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 65mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 9.2nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 780pF @ 10V FET Feature - Power Dissipation (Max) 950mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSMT6 (SC-95) Package / Case SOT-23-6 Thin, TSOT-23-6 |
Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V Rds On (Max) @ Id, Vgs 2.9mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 81nC @ 7.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5150pF @ 40V FET Feature - Power Dissipation (Max) 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V Rds On (Max) @ Id, Vgs 180mOhm @ 930mA, 4.5V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 160pF @ 15V FET Feature - Power Dissipation (Max) 625mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Taiwan Semiconductor Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 700V Current - Continuous Drain (Id) @ 25°C 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.2A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 370pF @ 100V FET Feature - Power Dissipation (Max) 38W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
