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IPD60R1K0CEATMA1

IPD60R1K0CEATMA1

For Reference Only

Part Number IPD60R1K0CEATMA1
PNEDA Part # IPD60R1K0CEATMA1
Description MOSFET N-CH 600V TO-252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,560
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD60R1K0CEATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD60R1K0CEATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPD60R1K0CEATMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ CE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds280pF @ 100V
FET Feature-
Power Dissipation (Max)37W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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