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IPD64CN10N G

IPD64CN10N G

For Reference Only

Part Number IPD64CN10N G
PNEDA Part # IPD64CN10N-G
Description MOSFET N-CH 100V 17A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,578
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD64CN10N G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD64CN10N G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD64CN10N G, IPD64CN10N G Datasheet (Total Pages: 10, Size: 781.54 KB)
PDFIPU64CN10N G Datasheet Cover
IPU64CN10N G Datasheet Page 2 IPU64CN10N G Datasheet Page 3 IPU64CN10N G Datasheet Page 4 IPU64CN10N G Datasheet Page 5 IPU64CN10N G Datasheet Page 6 IPU64CN10N G Datasheet Page 7 IPU64CN10N G Datasheet Page 8 IPU64CN10N G Datasheet Page 9 IPU64CN10N G Datasheet Page 10

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IPD64CN10N G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs64mOhm @ 17A, 10V
Vgs(th) (Max) @ Id4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds569pF @ 50V
FET Feature-
Power Dissipation (Max)44W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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