IPD90N06S4L05ATMA1
For Reference Only
| Part Number | IPD90N06S4L05ATMA1 |
| PNEDA Part # | IPD90N06S4L05ATMA1 |
| Description | MOSFET N-CH 60V 90A TO252-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,606 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 27 - May 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPD90N06S4L05ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPD90N06S4L05ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPD90N06S4L05ATMA1 Datasheet
- where to find IPD90N06S4L05ATMA1
- Infineon Technologies
- Infineon Technologies IPD90N06S4L05ATMA1
- IPD90N06S4L05ATMA1 PDF Datasheet
- IPD90N06S4L05ATMA1 Stock
- IPD90N06S4L05ATMA1 Pinout
- Datasheet IPD90N06S4L05ATMA1
- IPD90N06S4L05ATMA1 Supplier
- Infineon Technologies Distributor
- IPD90N06S4L05ATMA1 Price
- IPD90N06S4L05ATMA1 Distributor
IPD90N06S4L05ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 90A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 60µA |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 8180pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
The Products You May Be Interested In
|
Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 800mOhm @ 4A, 10V Vgs(th) (Max) @ Id 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1050pF @ 25V FET Feature - Power Dissipation (Max) 42W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Series NexFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 34A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.9mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 4.5V Vgs (Max) +16V, -12V Input Capacitance (Ciss) (Max) @ Vds 3650pF @ 12.5V FET Feature - Power Dissipation (Max) 3.2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-VSON-CLIP (5x6) Package / Case 8-PowerTDFN |
Manufacturer Cree/Wolfspeed Series C3M™ FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V Rds On (Max) @ Id, Vgs 360mOhm @ 7.5A, 15V Vgs(th) (Max) @ Id 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 15V Vgs (Max) +18V, -8V Input Capacitance (Ciss) (Max) @ Vds 150pF @ 600V FET Feature - Power Dissipation (Max) 54W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Manufacturer Toshiba Semiconductor and Storage Series U-MOSIII FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 30mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 10V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package VS-8 (2.9x1.5) Package / Case 8-SMD, Flat Lead |
Manufacturer Infineon Technologies Series CoolMOS™ P7 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 37A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 80mOhm @ 11.8A, 10V Vgs(th) (Max) @ Id 4V @ 590µA Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2180pF @ 400V FET Feature - Power Dissipation (Max) 129W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |
