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IPDH4N03LAG

IPDH4N03LAG

For Reference Only

Part Number IPDH4N03LAG
PNEDA Part # IPDH4N03LAG
Description MOSFET N-CH 25V 90A TO252-3-11
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,758
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPDH4N03LAG Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPDH4N03LAG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPDH4N03LAG, IPDH4N03LAG Datasheet (Total Pages: 10, Size: 405.91 KB)
PDFIPSH4N03LA G Datasheet Cover
IPSH4N03LA G Datasheet Page 2 IPSH4N03LA G Datasheet Page 3 IPSH4N03LA G Datasheet Page 4 IPSH4N03LA G Datasheet Page 5 IPSH4N03LA G Datasheet Page 6 IPSH4N03LA G Datasheet Page 7 IPSH4N03LA G Datasheet Page 8 IPSH4N03LA G Datasheet Page 9 IPSH4N03LA G Datasheet Page 10

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IPDH4N03LAG Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 60A, 10V
Vgs(th) (Max) @ Id2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs26nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3200pF @ 15V
FET Feature-
Power Dissipation (Max)94W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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