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IPDH5N03LA G

IPDH5N03LA G

For Reference Only

Part Number IPDH5N03LA G
PNEDA Part # IPDH5N03LA-G
Description MOSFET N-CH 25V 50A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,444
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPDH5N03LA G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPDH5N03LA G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPDH5N03LA G, IPDH5N03LA G Datasheet (Total Pages: 10, Size: 408.67 KB)
PDFIPSH5N03LA G Datasheet Cover
IPSH5N03LA G Datasheet Page 2 IPSH5N03LA G Datasheet Page 3 IPSH5N03LA G Datasheet Page 4 IPSH5N03LA G Datasheet Page 5 IPSH5N03LA G Datasheet Page 6 IPSH5N03LA G Datasheet Page 7 IPSH5N03LA G Datasheet Page 8 IPSH5N03LA G Datasheet Page 9 IPSH5N03LA G Datasheet Page 10

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IPDH5N03LA G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2653pF @ 15V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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