IPG20N04S4L08ATMA1
For Reference Only
| Part Number | IPG20N04S4L08ATMA1 |
| PNEDA Part # | IPG20N04S4L08ATMA1 |
| Description | MOSFET 2N-CH 8TDSON |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 182,286 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 2 - May 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPG20N04S4L08ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPG20N04S4L08ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
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- Delivery date: usually 2 to 7 working days.
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IPG20N04S4L08ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 22µA |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3050pF @ 25V |
| Power - Max | 54W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-4 |
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Manufacturer ON Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 630mA Rds On (Max) @ Id, Vgs 375mOhm @ 630mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 46pF @ 20V Power - Max 270mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-88/SC70-6/SOT-363 |
Manufacturer ON Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 2.6A Rds On (Max) @ Id, Vgs 160mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 200pF @ 30V Power - Max 900mW Operating Temperature - Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
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