IPG20N06S2L35ATMA1
For Reference Only
| Part Number | IPG20N06S2L35ATMA1 |
| PNEDA Part # | IPG20N06S2L35ATMA1 |
| Description | MOSFET 2N-CH 55V 20A TDSON-8-4 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 37,296 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 14 - Jun 19 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPG20N06S2L35ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPG20N06S2L35ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
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IPG20N06S2L35ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 27µA |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 25V |
| Power - Max | 65W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-4 |
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Manufacturer Advanced Linear Devices Inc. Series - FET Type 2 N and 2 P-Channel Matched Pair FET Feature Standard Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 500Ohm @ 5V Vgs(th) (Max) @ Id 1V @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 3pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Through Hole Package / Case 14-DIP (0.300", 7.62mm) Supplier Device Package 14-PDIP |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.3A (Ta) Rds On (Max) @ Id, Vgs 57mOhm @ 2.3A, 2.5V Vgs(th) (Max) @ Id 750mV @ 11µA Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds 259pF @ 10V Power - Max 500mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package PG-TSOP-6-6 |
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 740mA Rds On (Max) @ Id, Vgs 440mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.65nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 37pF @ 25V Power - Max 410mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package 6-TSSOP |
