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IPG20N06S4L26ATMA1

IPG20N06S4L26ATMA1

For Reference Only

Part Number IPG20N06S4L26ATMA1
PNEDA Part # IPG20N06S4L26ATMA1
Description MOSFET 2N-CH 60V 20A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 239,598
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPG20N06S4L26ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPG20N06S4L26ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays

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IPG20N06S4L26ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C20A
Rds On (Max) @ Id, Vgs26mOhm @ 17A, 10V
Vgs(th) (Max) @ Id2.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1430pF @ 25V
Power - Max33W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackagePG-TDSON-8-4

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