IPG20N06S4L26ATMA1
For Reference Only
| Part Number | IPG20N06S4L26ATMA1 |
| PNEDA Part # | IPG20N06S4L26ATMA1 |
| Description | MOSFET 2N-CH 60V 20A TDSON-8 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 239,598 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPG20N06S4L26ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPG20N06S4L26ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
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IPG20N06S4L26ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 10µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1430pF @ 25V |
| Power - Max | 33W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-4 |
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 15A Rds On (Max) @ Id, Vgs 45mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.2V @ 10µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1420pF @ 25V Power - Max 21W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerVDFN Supplier Device Package PG-TDSON-8-4 |
