IPG20N10S4L22AATMA1
For Reference Only
Part Number | IPG20N10S4L22AATMA1 |
PNEDA Part # | IPG20N10S4L22AATMA1 |
Description | MOSFET 2N-CH 100V 20A TDSON-8 |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 215,058 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | May 1 - May 6 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPG20N10S4L22AATMA1 Resources
Brand | Infineon Technologies |
ECAD Module | |
Mfr. Part Number | IPG20N10S4L22AATMA1 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
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IPG20N10S4L22AATMA1 Specifications
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 20A |
Rds On (Max) @ Id, Vgs | 22mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1755pF @ 25V |
Power - Max | 60W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount, Wettable Flank |
Package / Case | 8-PowerVDFN |
Supplier Device Package | PG-TDSON-8-10 |
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