IPG20N10S4L35ATMA1
For Reference Only
| Part Number | IPG20N10S4L35ATMA1 |
| PNEDA Part # | IPG20N10S4L35ATMA1 |
| Description | MOSFET 2N-CH 8TDSON |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 76,464 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 17 - Jun 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPG20N10S4L35ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPG20N10S4L35ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
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IPG20N10S4L35ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 16µA |
| Gate Charge (Qg) (Max) @ Vgs | 17.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1105pF @ 25V |
| Power - Max | 43W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-4 |
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