Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPI040N06N3GHKSA1

IPI040N06N3GHKSA1

For Reference Only

Part Number IPI040N06N3GHKSA1
PNEDA Part # IPI040N06N3GHKSA1
Description MOSFET N-CH 60V 90A TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,122
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI040N06N3GHKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI040N06N3GHKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPI040N06N3GHKSA1 Datasheet
  • where to find IPI040N06N3GHKSA1
  • Infineon Technologies

  • Infineon Technologies IPI040N06N3GHKSA1
  • IPI040N06N3GHKSA1 PDF Datasheet
  • IPI040N06N3GHKSA1 Stock

  • IPI040N06N3GHKSA1 Pinout
  • Datasheet IPI040N06N3GHKSA1
  • IPI040N06N3GHKSA1 Supplier

  • Infineon Technologies Distributor
  • IPI040N06N3GHKSA1 Price
  • IPI040N06N3GHKSA1 Distributor

IPI040N06N3GHKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4mOhm @ 90A, 10V
Vgs(th) (Max) @ Id4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs98nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11000pF @ 30V
FET Feature-
Power Dissipation (Max)188W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

The Products You May Be Interested In

NVTFS5C680NLWFTAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

7.82A (Ta), 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

26.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

327pF @ 25V

FET Feature

-

Power Dissipation (Max)

3W (Ta), 20W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WDFN (3.3x3.3)

Package / Case

8-PowerWDFN

BSP316PE6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

680mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.8Ohm @ 680mA, 10V

Vgs(th) (Max) @ Id

2V @ 170µA

Gate Charge (Qg) (Max) @ Vgs

6.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

146pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

STP60NF10

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

23mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

104nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4270pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

AO4304_001

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRF3711STRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2980pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 120W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

MAX5525ETC+T

MAX5525ETC+T

Maxim Integrated

IC DAC 10BIT V-OUT 12TQFN

ACF321825-103-TD01

ACF321825-103-TD01

TDK

FILTER LC(T) SMD

74HC4066BQ,115

74HC4066BQ,115

Nexperia

IC SWITCH QUAD 1X2 14DHVQFN

PIC18F63J11-I/PT

PIC18F63J11-I/PT

Microchip Technology

IC MCU 8BIT 8KB FLASH 64TQFP

ADR421ARMZ-REEL7

ADR421ARMZ-REEL7

Analog Devices

IC VREF SERIES 2.5V 8MSOP

2SC4793(F,M)

2SC4793(F,M)

Toshiba Semiconductor and Storage

TRANS NPN 230V 1A TO220NIS

ICM7555ISA

ICM7555ISA

Maxim Integrated

IC OSC SGL TIMER 500KHZ 8-SOIC

FDD86540

FDD86540

ON Semiconductor

MOSFET N-CH 60V 50A DPAK-3

LM1458M

LM1458M

ON Semiconductor

IC OPAMP GP 2 CIRCUIT 8SOIC

EMS22A50-D28-LT6

EMS22A50-D28-LT6

Bourns

ROTARY ENCODER MAGNETIC 1024PPR

DS2781E+T&R

DS2781E+T&R

Maxim Integrated

IC FUEL GAUGE BATT 8TSSOP

1N4148WT

1N4148WT

ON Semiconductor

DIODE GEN PURP 75V 200MA SOD523F