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IPI04CN10N G

IPI04CN10N G

For Reference Only

Part Number IPI04CN10N G
PNEDA Part # IPI04CN10N-G
Description MOSFET N-CH 100V 100A TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,040
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI04CN10N G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI04CN10N G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPI04CN10N G, IPI04CN10N G Datasheet (Total Pages: 11, Size: 874.12 KB)
PDFIPI04CN10N G Datasheet Cover
IPI04CN10N G Datasheet Page 2 IPI04CN10N G Datasheet Page 3 IPI04CN10N G Datasheet Page 4 IPI04CN10N G Datasheet Page 5 IPI04CN10N G Datasheet Page 6 IPI04CN10N G Datasheet Page 7 IPI04CN10N G Datasheet Page 8 IPI04CN10N G Datasheet Page 9 IPI04CN10N G Datasheet Page 10 IPI04CN10N G Datasheet Page 11

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IPI04CN10N G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs210nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds13800pF @ 50V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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