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IPI04N03LA

IPI04N03LA

For Reference Only

Part Number IPI04N03LA
PNEDA Part # IPI04N03LA
Description MOSFET N-CH 25V 80A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,598
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI04N03LA Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI04N03LA
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPI04N03LA, IPI04N03LA Datasheet (Total Pages: 10, Size: 303.22 KB)
PDFIPP04N03LA Datasheet Cover
IPP04N03LA Datasheet Page 2 IPP04N03LA Datasheet Page 3 IPP04N03LA Datasheet Page 4 IPP04N03LA Datasheet Page 5 IPP04N03LA Datasheet Page 6 IPP04N03LA Datasheet Page 7 IPP04N03LA Datasheet Page 8 IPP04N03LA Datasheet Page 9 IPP04N03LA Datasheet Page 10

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IPI04N03LA Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 55A, 10V
Vgs(th) (Max) @ Id2V @ 60µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3877pF @ 15V
FET Feature-
Power Dissipation (Max)107W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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