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IPI08CN10N G

IPI08CN10N G

For Reference Only

Part Number IPI08CN10N G
PNEDA Part # IPI08CN10N-G
Description MOSFET N-CH 100V 95A TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,322
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI08CN10N G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI08CN10N G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPI08CN10N G, IPI08CN10N G Datasheet (Total Pages: 11, Size: 750.26 KB)
PDFIPI08CN10N G Datasheet Cover
IPI08CN10N G Datasheet Page 2 IPI08CN10N G Datasheet Page 3 IPI08CN10N G Datasheet Page 4 IPI08CN10N G Datasheet Page 5 IPI08CN10N G Datasheet Page 6 IPI08CN10N G Datasheet Page 7 IPI08CN10N G Datasheet Page 8 IPI08CN10N G Datasheet Page 9 IPI08CN10N G Datasheet Page 10 IPI08CN10N G Datasheet Page 11

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IPI08CN10N G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 95A, 10V
Vgs(th) (Max) @ Id4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6660pF @ 50V
FET Feature-
Power Dissipation (Max)167W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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