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IPI26CNE8N G

IPI26CNE8N G

For Reference Only

Part Number IPI26CNE8N G
PNEDA Part # IPI26CNE8N-G
Description MOSFET N-CH 85V 35A TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,868
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 23 - Jun 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI26CNE8N G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI26CNE8N G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPI26CNE8N G, IPI26CNE8N G Datasheet (Total Pages: 13, Size: 712.42 KB)
PDFIPI26CNE8N G Datasheet Cover
IPI26CNE8N G Datasheet Page 2 IPI26CNE8N G Datasheet Page 3 IPI26CNE8N G Datasheet Page 4 IPI26CNE8N G Datasheet Page 5 IPI26CNE8N G Datasheet Page 6 IPI26CNE8N G Datasheet Page 7 IPI26CNE8N G Datasheet Page 8 IPI26CNE8N G Datasheet Page 9 IPI26CNE8N G Datasheet Page 10 IPI26CNE8N G Datasheet Page 11

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IPI26CNE8N G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)85V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs26mOhm @ 35A, 10V
Vgs(th) (Max) @ Id4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2070pF @ 40V
FET Feature-
Power Dissipation (Max)71W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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