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IPI35CN10N G

IPI35CN10N G

For Reference Only

Part Number IPI35CN10N G
PNEDA Part # IPI35CN10N-G
Description MOSFET N-CH 100V 27A TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,146
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI35CN10N G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI35CN10N G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPI35CN10N G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C27A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs35mOhm @ 27A, 10V
Vgs(th) (Max) @ Id4V @ 29µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1570pF @ 50V
FET Feature-
Power Dissipation (Max)58W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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