IPI80N04S2H4AKSA2
For Reference Only
| Part Number | IPI80N04S2H4AKSA2 |
| PNEDA Part # | IPI80N04S2H4AKSA2 |
| Description | MOSFET N-CH 40V 80A TO262-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,988 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 5 - May 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPI80N04S2H4AKSA2 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPI80N04S2H4AKSA2 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPI80N04S2H4AKSA2 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 148nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO262-3-1 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Manufacturer Toshiba Semiconductor and Storage Series U-MOSIII FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 47mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 10.8nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 510pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package ES6 Package / Case SOT-563, SOT-666 |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 31A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.7mOhm @ 90A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 68.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4305pF @ 25V FET Feature - Power Dissipation (Max) 3.6W (Ta), 167W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerDI5060-8 Package / Case 8-PowerTDFN |
Manufacturer Vishay Siliconix Series E FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 64A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 47mOhm @ 30.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 371nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 7407pF @ 100V FET Feature - Power Dissipation (Max) 520W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AD Package / Case TO-247-3 |
