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IPI80N06S2L11AKSA2

IPI80N06S2L11AKSA2

For Reference Only

Part Number IPI80N06S2L11AKSA2
PNEDA Part # IPI80N06S2L11AKSA2
Description MOSFET N-CH 55V 80A TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,230
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI80N06S2L11AKSA2 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI80N06S2L11AKSA2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPI80N06S2L11AKSA2 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs10.7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id2V @ 93µA
Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2075pF @ 25V
FET Feature-
Power Dissipation (Max)158W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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