IPI80N06S407AKSA1
For Reference Only
| Part Number | IPI80N06S407AKSA1 |
| PNEDA Part # | IPI80N06S407AKSA1 |
| Description | MOSFET N-CH 60V 80A TO262-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 3,366 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 22 - May 27 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPI80N06S407AKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPI80N06S407AKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPI80N06S407AKSA1 Datasheet
- where to find IPI80N06S407AKSA1
- Infineon Technologies
- Infineon Technologies IPI80N06S407AKSA1
- IPI80N06S407AKSA1 PDF Datasheet
- IPI80N06S407AKSA1 Stock
- IPI80N06S407AKSA1 Pinout
- Datasheet IPI80N06S407AKSA1
- IPI80N06S407AKSA1 Supplier
- Infineon Technologies Distributor
- IPI80N06S407AKSA1 Price
- IPI80N06S407AKSA1 Distributor
IPI80N06S407AKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 7.4mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 40µA |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO262-3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
The Products You May Be Interested In
|
Manufacturer STMicroelectronics Series STripFET™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.5mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V Vgs (Max) ±18V Input Capacitance (Ciss) (Max) @ Vds 2160pF @ 25V FET Feature - Power Dissipation (Max) 3.2W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.9mOhm @ 13A, 10V Vgs(th) (Max) @ Id 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta), 20W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET S1 Package / Case DirectFET™ Isometric S1 |
Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 17.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 105mOhm @ 8.8A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 950pF @ 25V FET Feature - Power Dissipation (Max) 20W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 77.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 41mOhm @ 44.4A, 10V Vgs(th) (Max) @ Id 3.5V @ 2.96mA Gate Charge (Qg) (Max) @ Vgs 290nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6530pF @ 10V FET Feature - Power Dissipation (Max) 481W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO247-3 Package / Case TO-247-3 |
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 5.7mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 23.5nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1972pF @ 10V FET Feature - Power Dissipation (Max) 62.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SC-100, SOT-669 |
