IPL60R104C7AUMA1
For Reference Only
| Part Number | IPL60R104C7AUMA1 |
| PNEDA Part # | IPL60R104C7AUMA1 |
| Description | MOSFET N-CH 600V 20A 4VSON |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,122 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 4 - May 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPL60R104C7AUMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPL60R104C7AUMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
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- Delivery date: usually 2 to 7 working days.
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Notes
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IPL60R104C7AUMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ C7 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 104mOhm @ 9.7A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 490µA |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1819pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 122W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-VSON-4 |
| Package / Case | 4-PowerTSFN |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9mOhm @ 46A, 10V Vgs(th) (Max) @ Id 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3070pF @ 50V FET Feature - Power Dissipation (Max) 140W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 0.92mOhm @ 50A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 25V FET Feature - Power Dissipation (Max) 3.9W (Ta), 166W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
