IPL60R1K5C6SATMA1
For Reference Only
| Part Number | IPL60R1K5C6SATMA1 |
| PNEDA Part # | IPL60R1K5C6SATMA1 |
| Description | MOSFET N-CH 8TSON |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,898 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 1 - May 6 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPL60R1K5C6SATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPL60R1K5C6SATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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- Delivery date: usually 2 to 7 working days.
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IPL60R1K5C6SATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ C6 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 26.6W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Thin-PAK (5x6) |
| Package / Case | 8-PowerTDFN |
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.5mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 230µA Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 15mOhm @ 11.5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V Vgs (Max) 20V Input Capacitance (Ciss) (Max) @ Vds 1220pF @ 15V FET Feature - Power Dissipation (Max) 3W (Ta) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223-4 Package / Case TO-261-4, TO-261AA |
