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IPN60R3K4CEATMA1

IPN60R3K4CEATMA1

For Reference Only

Part Number IPN60R3K4CEATMA1
PNEDA Part # IPN60R3K4CEATMA1
Description MOSFET NCH 600V 2.6A SOT223
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 22,122
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPN60R3K4CEATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPN60R3K4CEATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPN60R3K4CEATMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs4.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds93pF @ 100V
FET FeatureSuper Junction
Power Dissipation (Max)5W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223
Package / CaseSOT-223-3

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