IPN70R1K0CEATMA1
For Reference Only
| Part Number | IPN70R1K0CEATMA1 |
| PNEDA Part # | IPN70R1K0CEATMA1 |
| Description | MOSFET N-CH 750V 7.4A SOT223 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,668 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 12 - Jun 17 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPN70R1K0CEATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPN70R1K0CEATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPN70R1K0CEATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 750V |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 14.9nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 328pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223 |
| Package / Case | TO-261-3 |
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3mOhm @ 55A, 10V Vgs(th) (Max) @ Id 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs 57nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7027pF @ 15V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
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