IPN70R2K0P7SATMA1
For Reference Only
| Part Number | IPN70R2K0P7SATMA1 |
| PNEDA Part # | IPN70R2K0P7SATMA1 |
| Description | COOLMOS P7 700V SOT-223 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,502 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 14 - Jun 19 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPN70R2K0P7SATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPN70R2K0P7SATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPN70R2K0P7SATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ P7 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 700V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 30µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 10V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 130pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 6W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223 |
| Package / Case | TO-261-3 |
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 1.2Ohm @ 350mA, 4.5V Vgs(th) (Max) @ Id 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V Vgs (Max) ±6V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 250mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-89-3 Package / Case SC-89, SOT-490 |
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 13.8mOhm @ 11A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1280pF @ 10V FET Feature - Power Dissipation (Max) 2.5W (Ta), 5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
