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IPP023N10N5AKSA1

IPP023N10N5AKSA1

For Reference Only

Part Number IPP023N10N5AKSA1
PNEDA Part # IPP023N10N5AKSA1
Description MOSFET N-CH 100V 120A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 13,020
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP023N10N5AKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP023N10N5AKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPP023N10N5AKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.8V @ 270µA
Gate Charge (Qg) (Max) @ Vgs210nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds15600pF @ 50V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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