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IPP023NE7N3G

IPP023NE7N3G

For Reference Only

Part Number IPP023NE7N3G
PNEDA Part # IPP023NE7N3G
Description MOSFET N-CH 75V 120A TO220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,226
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP023NE7N3G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP023NE7N3G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP023NE7N3G, IPP023NE7N3G Datasheet (Total Pages: 10, Size: 836.62 KB)
PDFIPP023NE7N3G Datasheet Cover
IPP023NE7N3G Datasheet Page 2 IPP023NE7N3G Datasheet Page 3 IPP023NE7N3G Datasheet Page 4 IPP023NE7N3G Datasheet Page 5 IPP023NE7N3G Datasheet Page 6 IPP023NE7N3G Datasheet Page 7 IPP023NE7N3G Datasheet Page 8 IPP023NE7N3G Datasheet Page 9 IPP023NE7N3G Datasheet Page 10

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IPP023NE7N3G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™ 3
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.8V @ 273µA
Gate Charge (Qg) (Max) @ Vgs206nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds14400pF @ 37.5V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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