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IPP04N03LB G

IPP04N03LB G

For Reference Only

Part Number IPP04N03LB G
PNEDA Part # IPP04N03LB-G
Description MOSFET N-CH 30V 80A TO-220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,056
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP04N03LB G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP04N03LB G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP04N03LB G, IPP04N03LB G Datasheet (Total Pages: 9, Size: 535.95 KB)
PDFIPP04N03LB G Datasheet Cover
IPP04N03LB G Datasheet Page 2 IPP04N03LB G Datasheet Page 3 IPP04N03LB G Datasheet Page 4 IPP04N03LB G Datasheet Page 5 IPP04N03LB G Datasheet Page 6 IPP04N03LB G Datasheet Page 7 IPP04N03LB G Datasheet Page 8 IPP04N03LB G Datasheet Page 9

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IPP04N03LB G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.8mOhm @ 55A, 10V
Vgs(th) (Max) @ Id2V @ 70µA
Gate Charge (Qg) (Max) @ Vgs40nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5203pF @ 15V
FET Feature-
Power Dissipation (Max)107W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

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