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IPP065N06LGAKSA1

IPP065N06LGAKSA1

For Reference Only

Part Number IPP065N06LGAKSA1
PNEDA Part # IPP065N06LGAKSA1
Description MOSFET N-CH 60V 80A TO-220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,948
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP065N06LGAKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP065N06LGAKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP065N06LGAKSA1, IPP065N06LGAKSA1 Datasheet (Total Pages: 10, Size: 738.54 KB)
PDFIPP065N06LGAKSA1 Datasheet Cover
IPP065N06LGAKSA1 Datasheet Page 2 IPP065N06LGAKSA1 Datasheet Page 3 IPP065N06LGAKSA1 Datasheet Page 4 IPP065N06LGAKSA1 Datasheet Page 5 IPP065N06LGAKSA1 Datasheet Page 6 IPP065N06LGAKSA1 Datasheet Page 7 IPP065N06LGAKSA1 Datasheet Page 8 IPP065N06LGAKSA1 Datasheet Page 9 IPP065N06LGAKSA1 Datasheet Page 10

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IPP065N06LGAKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2V @ 180µA
Gate Charge (Qg) (Max) @ Vgs157nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5100pF @ 30V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

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