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IPP06CN10N G

IPP06CN10N G

For Reference Only

Part Number IPP06CN10N G
PNEDA Part # IPP06CN10N-G
Description MOSFET N-CH 100V 100A TO-220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,804
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP06CN10N G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP06CN10N G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP06CN10N G, IPP06CN10N G Datasheet (Total Pages: 11, Size: 771.26 KB)
PDFIPP06CN10NGXKSA1 Datasheet Cover
IPP06CN10NGXKSA1 Datasheet Page 2 IPP06CN10NGXKSA1 Datasheet Page 3 IPP06CN10NGXKSA1 Datasheet Page 4 IPP06CN10NGXKSA1 Datasheet Page 5 IPP06CN10NGXKSA1 Datasheet Page 6 IPP06CN10NGXKSA1 Datasheet Page 7 IPP06CN10NGXKSA1 Datasheet Page 8 IPP06CN10NGXKSA1 Datasheet Page 9 IPP06CN10NGXKSA1 Datasheet Page 10 IPP06CN10NGXKSA1 Datasheet Page 11

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IPP06CN10N G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs139nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9200pF @ 50V
FET Feature-
Power Dissipation (Max)214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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