IPP080N06N G
For Reference Only
Part Number | IPP080N06N G |
PNEDA Part # | IPP080N06N-G |
Description | MOSFET N-CH 60V 80A TO-220 |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 5,508 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | May 5 - May 10 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPP080N06N G Resources
Brand | Infineon Technologies |
ECAD Module | |
Mfr. Part Number | IPP080N06N G |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
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IPP080N06N G Specifications
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 8mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 93nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3500pF @ 30V |
FET Feature | - |
Power Dissipation (Max) | 214W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3-1 |
Package / Case | TO-220-3 |
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