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IPP16CN10LGXKSA1

IPP16CN10LGXKSA1

For Reference Only

Part Number IPP16CN10LGXKSA1
PNEDA Part # IPP16CN10LGXKSA1
Description MOSFET N-CH 100V 54A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,100
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP16CN10LGXKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP16CN10LGXKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP16CN10LGXKSA1, IPP16CN10LGXKSA1 Datasheet (Total Pages: 9, Size: 545.67 KB)
PDFIPP16CN10LGXKSA1 Datasheet Cover
IPP16CN10LGXKSA1 Datasheet Page 2 IPP16CN10LGXKSA1 Datasheet Page 3 IPP16CN10LGXKSA1 Datasheet Page 4 IPP16CN10LGXKSA1 Datasheet Page 5 IPP16CN10LGXKSA1 Datasheet Page 6 IPP16CN10LGXKSA1 Datasheet Page 7 IPP16CN10LGXKSA1 Datasheet Page 8 IPP16CN10LGXKSA1 Datasheet Page 9

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IPP16CN10LGXKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs15.7mOhm @ 54A, 10V
Vgs(th) (Max) @ Id2.4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4190pF @ 50V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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