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IPP22N03S4L15AKSA1

IPP22N03S4L15AKSA1

For Reference Only

Part Number IPP22N03S4L15AKSA1
PNEDA Part # IPP22N03S4L15AKSA1
Description MOSFET N-CH 30V 22A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,658
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP22N03S4L15AKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP22N03S4L15AKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP22N03S4L15AKSA1, IPP22N03S4L15AKSA1 Datasheet (Total Pages: 9, Size: 188.46 KB)
PDFIPP22N03S4L15AKSA1 Datasheet Cover
IPP22N03S4L15AKSA1 Datasheet Page 2 IPP22N03S4L15AKSA1 Datasheet Page 3 IPP22N03S4L15AKSA1 Datasheet Page 4 IPP22N03S4L15AKSA1 Datasheet Page 5 IPP22N03S4L15AKSA1 Datasheet Page 6 IPP22N03S4L15AKSA1 Datasheet Page 7 IPP22N03S4L15AKSA1 Datasheet Page 8 IPP22N03S4L15AKSA1 Datasheet Page 9

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IPP22N03S4L15AKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs14.9mOhm @ 22A, 10V
Vgs(th) (Max) @ Id2.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds980pF @ 25V
FET Feature-
Power Dissipation (Max)31W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

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