IPP47N10S33AKSA1
For Reference Only
| Part Number | IPP47N10S33AKSA1 |
| PNEDA Part # | IPP47N10S33AKSA1 |
| Description | MOSFET N-CH 100V 47A TO220-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,120 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 12 - May 17 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPP47N10S33AKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPP47N10S33AKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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IPP47N10S33AKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | SIPMOS® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 33A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 2mA |
| Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3-1 |
| Package / Case | TO-220-3 |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 71mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 260pF @ 10V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 3-CPH Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Alpha & Omega Semiconductor Inc. Series AlphaMOS FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 18A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1333pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta), 50W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 65A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14mOhm @ 15A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 44.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3155pF @ 25V FET Feature - Power Dissipation (Max) 147W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK56, Power-SO8 Package / Case SC-100, SOT-669 |
