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IPP47N10SL26AKSA1

IPP47N10SL26AKSA1

For Reference Only

Part Number IPP47N10SL26AKSA1
PNEDA Part # IPP47N10SL26AKSA1
Description MOSFET N-CH 100V 47A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,578
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP47N10SL26AKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP47N10SL26AKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP47N10SL26AKSA1, IPP47N10SL26AKSA1 Datasheet (Total Pages: 8, Size: 3,643.67 KB)
PDFIPP47N10SL26AKSA1 Datasheet Cover
IPP47N10SL26AKSA1 Datasheet Page 2 IPP47N10SL26AKSA1 Datasheet Page 3 IPP47N10SL26AKSA1 Datasheet Page 4 IPP47N10SL26AKSA1 Datasheet Page 5 IPP47N10SL26AKSA1 Datasheet Page 6 IPP47N10SL26AKSA1 Datasheet Page 7 IPP47N10SL26AKSA1 Datasheet Page 8

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IPP47N10SL26AKSA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs26mOhm @ 33A, 10V
Vgs(th) (Max) @ Id2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs135nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2500pF @ 25V
FET Feature-
Power Dissipation (Max)175W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

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