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IPP60R1K4C6XKSA1

IPP60R1K4C6XKSA1

For Reference Only

Part Number IPP60R1K4C6XKSA1
PNEDA Part # IPP60R1K4C6XKSA1
Description MOSFET N-CH 600V 3.2A TO220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,130
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP60R1K4C6XKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP60R1K4C6XKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPP60R1K4C6XKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs1.1nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds200pF @ 100V
FET Feature-
Power Dissipation (Max)28.4W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

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