Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPP70N10SL16AKSA1

IPP70N10SL16AKSA1

For Reference Only

Part Number IPP70N10SL16AKSA1
PNEDA Part # IPP70N10SL16AKSA1
Description MOSFET N-CH 100V 70A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,988
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP70N10SL16AKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP70N10SL16AKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPP70N10SL16AKSA1 Datasheet
  • where to find IPP70N10SL16AKSA1
  • Infineon Technologies

  • Infineon Technologies IPP70N10SL16AKSA1
  • IPP70N10SL16AKSA1 PDF Datasheet
  • IPP70N10SL16AKSA1 Stock

  • IPP70N10SL16AKSA1 Pinout
  • Datasheet IPP70N10SL16AKSA1
  • IPP70N10SL16AKSA1 Supplier

  • Infineon Technologies Distributor
  • IPP70N10SL16AKSA1 Price
  • IPP70N10SL16AKSA1 Distributor

IPP70N10SL16AKSA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs16mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs240nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4540pF @ 25V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

The Products You May Be Interested In

IRL3715

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

54A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

14mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1060pF @ 10V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 71W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

STI28N60M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1440pF @ 100V

FET Feature

-

Power Dissipation (Max)

170W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

SI1032X-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

5Ohm @ 200mA, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.75nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

300mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89-3

Package / Case

SC-89, SOT-490

FDD9411-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.8mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1080pF @ 25V

FET Feature

-

Power Dissipation (Max)

48.4W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-PAK (TO-252)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

TK20A60U(Q,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1470pF @ 10V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

Recently Sold

ADF4360-7BCPZRL7

ADF4360-7BCPZRL7

Analog Devices

IC SYNTHESIZER VCO 24LFCSP

SC2596SETRT

SC2596SETRT

Semtech

IC REG LDO DDR 1OUT 8SOIC

WSL0603R1000FEA18

WSL0603R1000FEA18

Vishay Dale

RES 0.1 OHM 1% 1/5W 0603

M29W320EB70ZE6E

M29W320EB70ZE6E

Micron Technology Inc.

IC FLASH 32M PARALLEL 48TFBGA

LM2902N

LM2902N

ON Semiconductor

IC OPAMP GP 4 CIRCUIT 14DIP

SMAJ33CA

SMAJ33CA

Bourns

TVS DIODE 33V 53.3V SMA

64-2096PBF

64-2096PBF

Infineon Technologies

MOSFET N-CH 75V 160A D2PAK-7

PMBT3904VS,115

PMBT3904VS,115

Nexperia

TRANS 2NPN 40V 0.2A SOT666

ADM6318CY46ARJZ-R7

ADM6318CY46ARJZ-R7

Analog Devices

IC SUPERVISOR W/RESET SOT23-5

IRF7811A

IRF7811A

Infineon Technologies

MOSFET N-CH 28V 11.4A 8-SOIC

ADM3202ARUZ-REEL7

ADM3202ARUZ-REEL7

Analog Devices

IC TRANSCEIVER FULL 2/2 16TSSOP

S1M-13-F

S1M-13-F

Diodes Incorporated

DIODE GEN PURP 1KV 1A SMA