Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPP77N06S3-09

IPP77N06S3-09

For Reference Only

Part Number IPP77N06S3-09
PNEDA Part # IPP77N06S3-09
Description MOSFET N-CH 55V 77A TO-220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,832
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP77N06S3-09 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP77N06S3-09
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP77N06S3-09, IPP77N06S3-09 Datasheet (Total Pages: 9, Size: 185.2 KB)
PDFIPP77N06S3-09 Datasheet Cover
IPP77N06S3-09 Datasheet Page 2 IPP77N06S3-09 Datasheet Page 3 IPP77N06S3-09 Datasheet Page 4 IPP77N06S3-09 Datasheet Page 5 IPP77N06S3-09 Datasheet Page 6 IPP77N06S3-09 Datasheet Page 7 IPP77N06S3-09 Datasheet Page 8 IPP77N06S3-09 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPP77N06S3-09 Datasheet
  • where to find IPP77N06S3-09
  • Infineon Technologies

  • Infineon Technologies IPP77N06S3-09
  • IPP77N06S3-09 PDF Datasheet
  • IPP77N06S3-09 Stock

  • IPP77N06S3-09 Pinout
  • Datasheet IPP77N06S3-09
  • IPP77N06S3-09 Supplier

  • Infineon Technologies Distributor
  • IPP77N06S3-09 Price
  • IPP77N06S3-09 Distributor

IPP77N06S3-09 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C77A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9.1mOhm @ 39A, 10V
Vgs(th) (Max) @ Id4V @ 55µA
Gate Charge (Qg) (Max) @ Vgs103nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5335pF @ 25V
FET Feature-
Power Dissipation (Max)107W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

The Products You May Be Interested In

TPH7R006PL,L1Q

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIX-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13.5mOhm @ 10A, 4.5V

Vgs(th) (Max) @ Id

2.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1875pF @ 30V

FET Feature

-

Power Dissipation (Max)

81W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN

CSD18540Q5B

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

100A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.2mOhm @ 28A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4230pF @ 30V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 195W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-VSON-CLIP (5x6)

Package / Case

8-PowerTDFN

QS5U34TR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

180mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

2.5nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

110pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

900mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSMT5

Package / Case

SOT-23-5 Thin, TSOT-23-5

IPA60R600P7XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 1.7A, 10V

Vgs(th) (Max) @ Id

4V @ 80µA

Gate Charge (Qg) (Max) @ Vgs

9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

363pF @ 400V

FET Feature

-

Power Dissipation (Max)

21W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220 Full Pack

Package / Case

TO-220-3 Full Pack

RRQ030P03TR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

75mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

480pF @ 10V

FET Feature

-

Power Dissipation (Max)

600mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSMT6 (SC-95)

Package / Case

SOT-23-6 Thin, TSOT-23-6

Recently Sold

LFXP2-17E-6FTN256I

LFXP2-17E-6FTN256I

Lattice Semiconductor Corporation

IC FPGA 201 I/O 256FTBGA

NFE31PT220R1E9L

NFE31PT220R1E9L

Murata

FILTER LC(T) 22PF SMD

IHLP1616BZERR47M11

IHLP1616BZERR47M11

Vishay Dale

FIXED IND 470NH 7A 16 MOHM SMD

ATXMEGA16A4U-AU

ATXMEGA16A4U-AU

Microchip Technology

IC MCU 8/16BIT 16KB FLASH 44TQFP

US6K1TR

US6K1TR

Rohm Semiconductor

MOSFET 2N-CH 30V 1.5A TUMT6

HSMG-C170

HSMG-C170

Broadcom

LED GREEN DIFFUSED CHIP SMD

AD8056ARZ

AD8056ARZ

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

AD420ARZ-32-REEL

AD420ARZ-32-REEL

Analog Devices

IC DAC 16BIT V OR A-OUT 24SOIC

MCP1725-3302E/MC

MCP1725-3302E/MC

Microchip Technology

IC REG LINEAR 3.3V 500MA 8DFN

MPXM2010GS

MPXM2010GS

NXP

SENS PRESSURE 1.45 PSI MAX MPAK

ATMEGA2561-16AI

ATMEGA2561-16AI

Microchip Technology

IC MCU 8BIT 256KB FLASH 64TQFP

APT2012SGC

APT2012SGC

Kingbright

LED GREEN CLEAR CHIP SMD