IPP80N03S4L04AKSA1
For Reference Only
| Part Number | IPP80N03S4L04AKSA1 |
| PNEDA Part # | IPP80N03S4L04AKSA1 |
| Description | MOSFET N-CH 30V 80A TO220-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,200 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 6 - May 11 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPP80N03S4L04AKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPP80N03S4L04AKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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IPP80N03S4L04AKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 45µA |
| Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3-1 |
| Package / Case | TO-220-3 |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 47A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 22mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 48nC @ 5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 110W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 54A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 14mOhm @ 26A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 10V FET Feature - Power Dissipation (Max) 3.8W (Ta), 71W (Tc) Operating Temperature - Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
