IPP80N06S2L05AKSA1
For Reference Only
| Part Number | IPP80N06S2L05AKSA1 |
| PNEDA Part # | IPP80N06S2L05AKSA1 |
| Description | MOSFET N-CH 55V 80A TO220-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 5,706 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 5 - May 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPP80N06S2L05AKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPP80N06S2L05AKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IPP80N06S2L05AKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 230nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3-1 |
| Package / Case | TO-220-3 |
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 450V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature - Mounting Type Surface Mount Supplier Device Package - Package / Case SOT-23-3 Flat Leads |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 18A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V Rds On (Max) @ Id, Vgs 6.5mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 16V FET Feature - Power Dissipation (Max) 3.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 340pF @ 25V FET Feature - Power Dissipation (Max) 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
